Programmable memory and cell

Static information storage and retrieval – Read/write circuit – Including level shift or pull-up circuit

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

3652257, 365 96, G11C 700

Patent

active

054870372

ABSTRACT:
An integrated circuit memory which includes at least some RAM/ROM hybrid columns. The RAM/ROM hybrid cells operate as normal SRAM cells forever, unless and until they are programmed to operate as ROM cells. Thus users who need the extra security permitted by ROM encoding can have this capability, while users who do not need ROM encoding can use off-the-shelf parts as RAM only.

REFERENCES:
patent: 4546455 (1985-10-01), Iwahashi et al.
patent: 4855803 (1989-08-01), Azumai et al.
patent: 4935899 (1990-06-01), Morigami
patent: 4995004 (1991-02-01), Lee

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Programmable memory and cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Programmable memory and cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Programmable memory and cell will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1509754

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.