Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material forms active...
Reexamination Certificate
2005-06-07
2005-06-07
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material forms active...
C257S302000, C438S257000, C438S131000, C365S230060
Reexamination Certificate
active
06903367
ABSTRACT:
Various embodiments provide a decoder for a memory array, comprising an array of address and output lines, vertical pillars, vertical floating gate transistors, and buried source lines. Each pillar includes single crystalline first and second contact layers separated by an oxide layer. Each floating gate transistor is formed in a single crystalline layer, having a thickness less than 10 nanometers, selectively disposed on a side of one of the pillars. Each transistor includes first and second source/drain regions in contact with the first and second contact layers, respectively, a body region opposing the oxide layer and contacting the first and second source/drain regions, and a floating gate opposing the body region. The source lines are disposed below the pillars and interconnect the first contact layer of pillars. Each of the address lines is disposed between rows of pillars and serves as a control gate.
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Micro)n Technology, Inc.
Nelms David
Schwegman Lundberg Woessner & Kluth P.A.
Tran Long
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