Programmable matrix array with chalcogenide material

Details Programmable matrix array with chalcogenide material Programmable matrix array with chalcogenide material

2008-10-02

2010-11-23

Lam, David (Department: 2827)

Static information storage and retrieval

Systems using particular element

Amorphous

C365S148000, C365S154000, C365S171000

Reexamination Certificate

active

07839674

ABSTRACT:
A chalcogenide material is proposed for programming the cross-connect transistor coupling interconnect lines of an electrically programmable matrix array. Leakage may be reduced by optionally placing a thin insulating breakdown layer in series with the select device or a phase change material. The matrix array may be used in a programmable logic device.

REFERENCES:
patent: 6847543 (2005-01-01), Toyoda et al.
patent: 7307451 (2007-12-01), Pellizzer et al.
patent: 7376008 (2008-05-01), Shepard
patent: 7499315 (2009-03-01), Lowrey et al.

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