Programmable mask ROM building element and process of...

Static information storage and retrieval – Read only systems – Semiconductive

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C365S094000

Reexamination Certificate

active

06906942

ABSTRACT:
A semiconductor memory component such as a mask-programmable ROM component, has two memory cell transistors adjacent to each other in one column of a memory cell field. First and a second row-select/potential-equalization lines are equidistant from the two memory cell transistors and vertically above a diffusion region, which is assigned to both memory cell transistors. The first or the second row-select/potential-equalization line can be connected both to the word line of the first memory cell transistor and to the word line of the memory cell transistor of the second memory cell for equalizing the potential with one of the two word lines.

REFERENCES:
patent: 5350703 (1994-09-01), Lee
patent: 5471416 (1995-11-01), Azmanov
patent: 5514609 (1996-05-01), Chen et al.
patent: 5663903 (1997-09-01), Guo
patent: 5917224 (1999-06-01), Zangara
patent: 5959877 (1999-09-01), Takahashi
patent: 6107666 (2000-08-01), Chang
patent: 6146950 (2000-11-01), Sheu et al.
patent: 6355550 (2002-03-01), Parris et al.
patent: 2002/0042182 (2002-04-01), Parris et al.
patent: 2002/0091894 (2002-07-01), Garg
patent: 42 26 421 (1993-03-01), None
patent: 100 05 460 (2001-01-01), None
patent: 4-276659 (1992-10-01), None
patent: 11-135651 (1999-05-01), None
“A New Contact Programming ROM Architecture for Digital Signal Processor”, Hiroshi Takahashi, Shigetoshi Muramatsu and Masayasu Itoigawa, 1998 Symposium on VLSI Circuits Digest of Technical Papers, IEEE, 1998, 5 pages.
“An 80 ns 1 Mbit Mask ROM with a New Memory Cell”, Fujio Masuoka, Shoji Ariizumi, Taira Iwase, Michihiro Ono and Norio Endo, IEEE Journal of Solid-State Circuits, vol. SC-19, No. 5, Oct., 1984, 8 pgs.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Programmable mask ROM building element and process of... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Programmable mask ROM building element and process of..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Programmable mask ROM building element and process of... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3498577

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.