Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Reexamination Certificate
2005-06-07
2005-06-07
Nelms, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
C257S059000, C257S521000, C257S527000, C438S149000, C438S158000
Reexamination Certificate
active
06903368
ABSTRACT:
A thin film made of silicon or another IV-group crystals (crystals and mixed crystals of C, Ge, Sn, and Pb) is twice scanned with a laser beam moving in two lateral directions in which crystal grains grow larger in order to form high-quality polycrystals in exact positions in the thin film, while defects uncontrollable by the prior arts are being reduced significantly, to realize a high-quality TFT device. The laser-scanning directions are defined by the crystallization face orientations.
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Physics and Properties of Semiconductors-A Resume, Carrier Transport Phenomena, Chart on p. 29, pp. 28-29.
Hatano Mutsuko
Shiba Takeo
Yamaguchi Shin'ya
A. Marquez, Esq. Juan Carlos
Fisher Esq. Stanley P.
Hitachi , Ltd.
Reed Smith L.L.P.
Tran Long
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