Programmable magnetic memory device FP-MRAM

Details Programmable magnetic memory device FP-MRAM Programmable magnetic memory device FP-MRAM

2003-09-30

2008-08-12

Nguyen, Tan T. (Department: 2827)

Static information storage and retrieval

Systems using particular element

Magnetoresistive

C365S173000

Reexamination Certificate

active

07411814

ABSTRACT:
A memory device has an information plane (32) for storing data bits in a magnetic state of an electro-magnetic material at an array of bit locations (31). The device further has an array of electro-magnetic sensor elements (51) that are aligned with the bit locations. The information plane (32) is programmable or programmed via a separate magnetic writing device (21). In particular a read-only sensor element (60) is described for a read-only magnetic memory.

REFERENCES:
patent: 5185716 (1993-02-01), Mehdipour
patent: 5237529 (1993-08-01), Spitzer
patent: 6163477 (2000-12-01), Tran
patent: 2001/0019461 (2001-09-01), Allenspach et al.

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