Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2011-05-17
2011-05-17
Nguyen, Tan T. (Department: 2827)
Static information storage and retrieval
Read/write circuit
Testing
C365S185090, C365S189120
Reexamination Certificate
active
07944765
ABSTRACT:
In one embodiment of the invention, an integrated circuit such as a programmable logic device includes volatile memory, nonvolatile memory, and a data shift register for reading data from the nonvolatile memory and for reading data from and writing data to the volatile memory. A built in self test (BIST) circuit is operable to test the nonvolatile memory without the data shift register reading data from the nonvolatile memory. The BIST circuit may include a finite state machine for performing at least one of the following tests on the nonvolatile memory: bulk erase, bulk program; margin bulk program; and/or margin bulk erase. A memory controller responsive to the finite state machine is operable to write data to and read data from the nonvolatile memory during testing of the nonvolatile memory.
REFERENCES:
patent: 6961279 (2005-11-01), Simko
patent: 7630259 (2009-12-01), Han et al.
Han Wei
Juenemann Warren
McLaury Loren
Yerramilli Yoshita
Lattice Semiconductor Corporation
Nguyen Tan T.
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