Programmable fuse with silicon germanium

Details Programmable fuse with silicon germanium Programmable fuse with silicon germanium

2005-10-11

2009-08-18

Chen, Jack (Department: 2893)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

Using structure alterable to nonconductive state

C438S487000, C438S601000, C257SE21529

Reexamination Certificate

active

07575958

ABSTRACT:
A programmable fuse and method of formation utilizing a layer of silicon germanium (SiGe) (e.g. monocrystalline) as a thermal insulator to contain heat generated during programming. The programmable fuse, in some examples, may be devoid of any dielectric materials between a conductive layer and a substrate. In one example, the conductive layer serves as programmable material, that in a low impedance state, electrically couples conductive structures. A programming current is applied to the programmable material to modify the programmable material to place the fuse in a high impedance state.

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International Search Report and Written Opinion.

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