Programmable fuse/non-volatile memory structures using...

Static information storage and retrieval – Systems using particular element – Amorphous

Reexamination Certificate

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C365S148000, C257S004000

Reexamination Certificate

active

07411818

ABSTRACT:
A programmable phase change material (PCM) structure includes a heater element formed at a transistor gate level of a semiconductor device, the heater element further including a pair of electrodes connected by a thin wire structure with respect to the electrodes, the heater element configured to receive programming current passed therethrough, a layer of phase change material disposed on top of a portion of the thin wire structure, and sensing circuitry configured to sense the resistance of the phase change material.

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