Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-03-22
2011-03-22
Nhu, David (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21170, C257SE21218, C257SE21229, C257SE21278, C257SE21293, C257SE21304, C257SE21545, C257SE21561, C257SE21645, C257SE21646, C257S312000, C257S347000
Reexamination Certificate
active
07910970
ABSTRACT:
In one aspect of the present invention, a programmable element, may include a semiconductor substrate, source/drain layers formed apart from each other in the upper surface of the semiconductor substrate, a gate insulating film including a charge-trapping film containing Hf and formed on a portion between the source/drain layers of the semiconductor substrate, and a gate electrode formed on the gate insulating film with a program voltage applied to the gate electrode.
REFERENCES:
patent: 4774421 (1988-09-01), Hartmann et al.
patent: 7265421 (2007-09-01), Madurawe
patent: 7279740 (2007-10-01), Bhattacharyya et al.
patent: 7595204 (2009-09-01), Price
patent: 7611979 (2009-11-01), Callegari et al.
patent: 2003-115537 (2003-04-01), None
Kabushiki Kaisha Toshiba
Nhu David
Turocy & Watson LLP
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