Static information storage and retrieval – Systems using particular element – Ferroelectric
Reexamination Certificate
2011-06-14
2011-06-14
Tran, Michael T (Department: 2827)
Static information storage and retrieval
Systems using particular element
Ferroelectric
C365S158000
Reexamination Certificate
active
07961493
ABSTRACT:
A programmable device including a source-drain-gate structure. The device includes two programming electrodes and an antiferromagnetic multiferroic material between the two programming electrodes for switching the spontaneous polarization between a first spontaneous polarization direction and a second spontaneous polarization direction. The programmable device further includes a ferromagnetic material, which is in immediate contact with the multiferroic material. Magnetization of the ferromagnetic material is switchable by a transition between the first switching state and the second switching state of the multiferroic material by an exchange coupling between electronic states of the multiferroic material and the ferromagnetic material. The programmable device also includes means for determining a direction of the magnetization of the ferromagnetic material. A spin valve effect is used for causing an electrical resistance between the source and the drain electrode.
REFERENCES:
patent: 6201259 (2001-03-01), Sato et al.
patent: 6201386 (2001-03-01), Jones et al.
patent: 7042669 (2006-05-01), Ogawa et al.
Karg Siegfried Friedrich
Meijer Gerhard Ingmar
International Business Machines - Corporation
Tran Michael T
Zarick Gail H.
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