Static information storage and retrieval – Read/write circuit – Testing
Reexamination Certificate
2005-09-06
2005-09-06
Lam, David (Department: 2827)
Static information storage and retrieval
Read/write circuit
Testing
C365S194000, C365S233100
Reexamination Certificate
active
06940768
ABSTRACT:
A double data rate (DDR) synchronous dynamic RAM (SDRAM), or DDR-SDRAM, memory controller employing a delay locked loop (DLL) circuit to delay an SDRAM data strobe (DQS) signal to the center, or ‘eye’ of the read data window. However, in distinction from conventional techniques, the initial delay determined by the DLL is fine tuned with an offset determined by a memory test. Moreover, in an additional embodiment, the delay may be further adjusted during operation to compensate for environmental conditions by a PVT (process, value, temperature) circuit.
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Dahlberg James A.
Duardo Obed
Agere Systems Inc.
Lam David
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