Programmable control of leakage current

Details Programmable control of leakage current Programmable control of leakage current

2006-10-24

2006-10-24

Phung, Anh (Department: 2824)

Static information storage and retrieval

Read/write circuit

Including reference or bias voltage generator

C365S154000

Reexamination Certificate

active

07126861

ABSTRACT:
An apparatus having a memory cell, a ground control circuitry coupled to the memory cell to programmably control a voltage at a first ground, a first circuitry coupled to the memory cell to provide a first voltage to the memory cell during a first period, and a second circuitry coupled to the memory cell to provide a second voltage to memory cell during a second period, is described. In various embodiments, the first voltage is reference to the first ground; and the second voltage is referenced to a second ground which is different from the first ground.

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Agarwal, Amit, et al., “A Single-Vt Low-Leakage Gated-Ground Cache for Deep Submicron,” IEEE Journal of Solid-State Circuits, vol. 38, No. 2, Feb. 2003, pp. 319-328.

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