Programmable conductor random access memory and a method for...

Details Programmable conductor random access memory and a method for... Programmable conductor random access memory and a method for...

2005-03-29

2005-03-29

Hoang, Huan (Department: 2818)

Static information storage and retrieval

Systems using particular element

Resistive

C365S100000, C365S158000

Reexamination Certificate

active

06873538

ABSTRACT:
The present invention provides an improved write circuit and method for writing a programmable conductor random access memory (PCRAM) cell. The method comprises precharging a bit line to a first voltage and applying a second voltage to a first terminal of a chalcogenide memory element. A second terminal of the chalcogenide memory element is selectively coupled to the bit line to produce a voltage across the memory element sufficient to write a predetermined resistance state into the element. The first voltage may take on two different values to program two different resistance states into the memory element.

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