Static information storage and retrieval – Systems using particular element – Amorphous
Patent
1981-07-06
1985-02-12
Fears, Terrell W.
Static information storage and retrieval
Systems using particular element
Amorphous
365174, G11C 1300
Patent
active
044995571
ABSTRACT:
An improved programmable cell for use in programmable electronic arrays such as PROM devices, logic arrays, gate arrays and die interconnect arrays. The cells have a highly non-conductive state settable and non-resettable into a highly conductive state. The cells have a resistance of 10,000 ohms or more in the non-conductive state which are settable into the conductive state by a threshold voltage of 10 volts or less, a current of 25 milliamps or less, for 100 microseconds or less. The cells in the conductive state have a resistance of 100 ohms or less. The cells have a maximum permittable processing temperature of 400.degree. centigrade or more and a storage temperature of 175.degree. centigrade or more. The cells are formed from doped silicon alloys including at least hydrogen and/or fluorine and contain from about 0.1 to 5 percent dopant. The cells can be plasma deposited from silane or silicon tetrafluoride and hydrogen with 20 to 150,000 ppm of dopant.
Each cell in an array is a thin film deposited cell and includes an isolating device which can be a bipolar or MOS device or can be a thin film diode or transistor. The associated addressing circuitry also can be conventional bipolar or MOS devices or thin film deposited devices. The cells have a cell area of less than one square mil to provide a high cell packing density.
REFERENCES:
patent: 3271591 (1966-09-01), Ovshinsky
patent: 4174521 (1979-11-01), Neale
patent: 4203123 (1980-05-01), Shanks
patent: 4217374 (1980-08-01), Ovshinsky et al.
patent: 4342044 (1982-07-01), Ovshinsky et al.
Flasck Richard A.
Holmberg Scott H.
Energy Conversion Devices Inc.
Fears Terrell W.
Norris Lawrence G.
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