Static information storage and retrieval – Read/write circuit – Having fuse element
Reexamination Certificate
2008-05-06
2008-05-06
Nguyen, Tuan T. (Department: 2824)
Static information storage and retrieval
Read/write circuit
Having fuse element
C365S188000, C365S189050, C365S214000, C365S189090
Reexamination Certificate
active
07369452
ABSTRACT:
A device having an OTP memory is disclosed. A program state of the OTP device is stored at a fuse that is connected in series between a first node and a latch. During a program mode, the first node is electrically connected to a program voltage. During a read mode, the first node is electrically connected to ground, whereby a first divided voltage is generated at a first node of the latch.
REFERENCES:
patent: 5334880 (1994-08-01), Abadeer et al.
patent: 6021067 (2000-02-01), Ha
patent: 6172934 (2001-01-01), Uchihira
patent: 6208509 (2001-03-01), Cha
patent: 6236599 (2001-05-01), Goto
patent: 6258700 (2001-07-01), Bohr et al.
patent: 6373762 (2002-04-01), Morgan
patent: 6529438 (2003-03-01), Suzuki et al.
patent: 7075848 (2006-07-01), Choi et al.
patent: 7092306 (2006-08-01), Lee
patent: 7136303 (2006-11-01), Smith et al.
patent: 7236418 (2007-06-01), Uvieghara
patent: 7245546 (2007-07-01), Uvieghara
patent: 7280397 (2007-10-01), Scheuerlein
Hoefler Alexander B.
Kenkare Prashant U.
Waldrip Jeffrey W.
Freescale Semiconductor Inc.
Nguyen Tuan T.
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