Static information storage and retrieval – Read/write circuit – Including reference or bias voltage generator
Reexamination Certificate
2008-04-10
2010-11-02
Dinh, Son (Department: 2824)
Static information storage and retrieval
Read/write circuit
Including reference or bias voltage generator
C365S189070, C365S193000
Reexamination Certificate
active
07826279
ABSTRACT:
Receiver architectures and related bias circuits for a data processor are provided. One embodiment of a receiver architecture for a computer processor includes a first linear receiver stage configured to receive a first input, a second input, and a first bias voltage. The first linear receiver stage is configured to generate a first differential output signal in response to a comparison between the first input and the second input. The first differential output signal has a specified programmable voltage swing that is influenced by the first bias voltage. The receiver architecture also includes a first programmable bias circuit coupled to the first linear receiver stage. The first programmable bias circuit is configured to generate the first bias voltage.
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patent: 7109770 (2006-09-01), Bui
patent: 7180352 (2007-02-01), Mooney et al.
patent: 7256652 (2007-08-01), Fang et al.
patent: 2005/0035820 (2005-02-01), Pessl
Jedec Standard, “DDR2 SDRAM Specification”, JESD79-2C (Revision of JESD79-2B) Jedec Solid State Technology Association, May 2006.
Brody Curtis M.
Chuang Grace
Kurker Christopher M.
Searles Shawn
Advanced Micro Devices , Inc.
Dinh Son
Ingrassia Fisher & Lorenz P.C.
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