Program method with locally optimized write parameters

Static information storage and retrieval – Systems using particular element – Amorphous

Reexamination Certificate

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C365S034000, C365S113000

Reexamination Certificate

active

07916524

ABSTRACT:
A method of addressing a memory cell includes applying a plurality of pulses to the memory cell, wherein a subsequent pulse has an amplitude greater than an initial pulse. In addition, a memory includes a memory cell and a control circuit configured to address the memory cell by applying a plurality of pulses to the memory cell, wherein a subsequent pulse has an amplitude greater than an initial pulse.

REFERENCES:
patent: 2004/0151023 (2004-08-01), Khouri et al.
patent: 2005/0232014 (2005-10-01), Kund et al.
patent: 2006/0028886 (2006-02-01), Choi et al.
patent: 2006/0221712 (2006-10-01), Lowrey et al.
patent: 2008/0316802 (2008-12-01), Happ et al.
“OUM—A 180 nm Nonvolatile Memory Cell Element Technology For Stand Alone and Embedded Applications:”, Stefan Lai and Tyler Lowrey, IEDM 2001, 4 pgs.
“Full Integration and Reliability Evaluation of Phase-change RAM Based on 0.24μm-CMOS Technologies”, Y.N. Hwang, J.S. Hong, S.H. Lee, S.J. Ahn, G.T. Jeong, G.H. Koh, J.H. Oh, H.J. Kim, W.C. Jeong, S.Y. Lee, J.H. Park, K.C. Ryoo, H. Horii, Y.H. Ha, J.H. Yi, W.Y. Cho, Y.T. Kim, K.H. Lee, S.H. Joo, S.O. Park, U.I. Chung, H.S. Jeong and Kinam Kim, VLSI 2003, 2 pgs.
“Highly Manufacturable High Density Phase Change Memory of 64Mb and Beyond”, S.J. Ahn, Y.J. Song, C.W. Jeong, J.M. Shin, Y. Fai, Y.N. Hwang, S.H. Lee, K.C. Ryoo, S.Y. Lee, J.H. Park, H. Horii, Y.H. Ha, J.H. Yi, B.J. Kuh, G.H. Koh, G.T. Jeong, H.S. Jeong, Kinam Kim and B.I. Ruy, IEDM 2004, 4 pgs.
“A 0.1μm 1.8V 256Mb 66MHz Synchronous Burst PRAM”, Sangbeom Kang, Wooyeong Cho, Beak-Hyung Cho, Kwang-Jin Lee, Chang-See Lee, Hyung-Rock Oh, Buyng-Gil Choi, Qi Want, Hye-Jin Kim, Mu-Hui Park, Yu-Hwan Ro, Suyeon Kim, Du-Eung Kim, Kang-Sik Cho, Choong-Duk Ha, Oungran Kim, Ki-Sung Kim, Choong-Ryeol Hwang, Choong-Keun Kwak, Hyun-Geun Byun, and Yun Sueng Shin, ISSCC 2006/ Session 7, Non-Volatile Memory/7.5, 3 pgs.
“Enhanced Write Performance of a 64-Mb Phase-Change Random Access Memory”, Hyung-Rok Oh, Beak-Hyung Cho, Woo Yeong Cho, Sangbeom Kang, Byung -Gil Choi, Hye-Jin Kim, Ki-Sung Kim, Du-Eung Kim, Choong-Keun Kwak, Hyun-Geun Byun, Gi-Tae Jeong, Hong-Sik Jeong and Kinam Kim, IEEE Journal of Solid-State Circuits, vol. 41, No. 1, Jan. 2006, 5 pgs.
“Processor-Based Built-in Self-Optimizer for 90nm Diode-Switch PRAM”, Kyomin Sohn, Hyejung Kim, Jerald Yoo, Jeong-Ho Woo, Seung-Jin Lee, Woo-Yeong Cho, Bo-Tak Lim, Byung-Gil Choi, Chang-Sik Kim, Choong-Keun Kwak, Chang-Hyan Kim and Hoi-Jun Yoo, 2007 Symposium on VLSI Circuits Digest of Technical Papers, 2 pgs.

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