Program method of flash memory capable of compensating read...

Details Program method of flash memory capable of compensating read... Program method of flash memory capable of compensating read...

2007-02-01

2009-02-10

Mai, Son L (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185030, C365S185220, C365S185280

Reexamination Certificate

active

07489558

ABSTRACT:
The present invention provides a program method of a flash memory device including a plurality of memory cells for storing multi-bit data indicating one of a plurality of states. The memory cells are subjected to a primary program operation. Those memory cells arranged within a specific region of respective states are subjected to a secondary program operation to have a threshold voltage equivalent to or higher than a verify voltage used in the primary program operation. Thus, although a threshold voltage distribution is widened due to an electric field coupling/F-poly coupling and HTS, a read margin between adjacent states may be sufficiently secured using the program method.

REFERENCES:
patent: 6639849 (2003-10-01), Takahashi et al.
patent: 6643177 (2003-11-01), Le et al.
patent: 6738287 (2004-05-01), Yano
patent: 6778442 (2004-08-01), Hamilton et al.
patent: 7362612 (2008-04-01), Kang et al.
patent: 2003/0169621 (2003-09-01), Kawamura
patent: 2006/0056238 (2006-03-01), Park et al.
patent: 2007/0159889 (2007-07-01), Kang et al.
patent: 2007/0159892 (2007-07-01), Kang et al.
patent: 2007/0171726 (2007-07-01), Kang et al.
patent: 2007/0279989 (2007-12-01), Aritome
patent: 11-317087 (1999-11-01), None
patent: 2002-184191 (2002-06-01), None
patent: 2003-346485 (2003-12-01), None
patent: 1999-0066130 (1999-08-01), None

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