Static information storage and retrieval – Floating gate – Particular connection
Reexamination Certificate
2011-01-06
2011-12-06
Tran, Michael (Department: 2827)
Static information storage and retrieval
Floating gate
Particular connection
C365S185240
Reexamination Certificate
active
08072810
ABSTRACT:
The present invention describes a uniform program method and a uniform erase method of a charge trapping memory by employing a substrate transient hot electron technique for programming, and a substrate transient hot hole technique for erasing, which emulate an FN tunneling method for NAND memory operation. The methods of the present invention are applicable to a wide variety of charge trapping memories including n-channel or p-channel SONOS types of memories and floating gate (FG) type memories. the programming of the charge trapping memory is conducted using a substrate transient hot electron injection in which a body bias voltage Vb has a short pulse width and a gate bias voltage Vg has a pulse width that is sufficient to move electrons from a channel region to a charge trapping structure.
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Hsieh Kuang-Yeu
Hsu Tzu-Hsuan
King Ya-Chin
Wu Chao-I
Haynes Beffel & Wolfeld LLP
Macronix International Co. Ltd.
Tran Michael
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