Program and erase methods for nonvolatile memory

Details Program and erase methods for nonvolatile memory Program and erase methods for nonvolatile memory

2008-05-12

2010-10-12

Mai, Son L (Department: 2827)

Static information storage and retrieval

Floating gate

Particular biasing

C365S185190, C365S185270

Reexamination Certificate

active

07813183

ABSTRACT:
Methods of programming or erasing a nonvolatile memory device having a charge storage layer including performing at least one unit programming or erasing loop, each unit programming or erasing loop including applying a programming pulse, an erasing pulse, a time delay, a soft erase pulse, soft programming pulse and/or a verifying pulse as a positive or negative voltage to a portion (for example, a word line or a substrate) of the nonvolatile memory device.

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