Production of single crystal semiconductors

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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156616R, 156DIG105, 427 93, C30B 2960

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044301502

ABSTRACT:
Polycrystalline semiconductor material is treated to form a skin of a thermally stable substance and melted with the molten material retained by the film. Upon cooling, the material solidifies as single crystal and the skin is removed.

REFERENCES:
patent: 3998659 (1976-12-01), Wakefield
patent: 4033792 (1977-07-01), Giamei et al.
patent: 4040849 (1977-08-01), Greskovich et al.
patent: 4188177 (1980-02-01), Kilby et al.
patent: 4298423 (1981-11-01), Lindmayer
patent: 4377605 (1983-03-01), Yamamoto

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