Production of single crystal II-V material

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

156618, 156DIG65, 156DIG70, C30B 1504, C30B 1522, C30B 2944

Patent

active

042996511

ABSTRACT:
Fabrication of single crystals of III-V semiconductor materials such as, e.g., indium phosphide by pulling from a melt may be hampered by twin formation. It has been discovered that twin formation is prevented by adjusting processing parameters such as, e.g., melt temperature, rotation rate, thermal gradients, and pull rate so as to limit rate of diameter enlargement of a boule. Specifically, diameter enlargement preferably does not exceed 0.3577 times the increase in length of a boule being pulled.

REFERENCES:
K. J. Bachmann et al.; "Liquid Encapsulated Czochralski Pulling of InP Crystals"; Jrnl. of Electronic Materials; vol. 4; No. 2; 1975; pp. 389-406.
A. Steinemann et al.; "Growth Peculiarities of Gallium Arsenide Single Crystals"; Solid-State Electronics; vol. 6; 1963; pp. 597-604.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Production of single crystal II-V material does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Production of single crystal II-V material, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Production of single crystal II-V material will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2361255

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.