Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step
Patent
1980-11-06
1981-11-10
Sever, Frank
Adhesive bonding and miscellaneous chemical manufacture
Delaminating processes adapted for specified product
Delaminating in preparation for post processing recycling step
156618, 156DIG65, 156DIG70, C30B 1504, C30B 1522, C30B 2944
Patent
active
042996511
ABSTRACT:
Fabrication of single crystals of III-V semiconductor materials such as, e.g., indium phosphide by pulling from a melt may be hampered by twin formation. It has been discovered that twin formation is prevented by adjusting processing parameters such as, e.g., melt temperature, rotation rate, thermal gradients, and pull rate so as to limit rate of diameter enlargement of a boule. Specifically, diameter enlargement preferably does not exceed 0.3577 times the increase in length of a boule being pulled.
REFERENCES:
K. J. Bachmann et al.; "Liquid Encapsulated Czochralski Pulling of InP Crystals"; Jrnl. of Electronic Materials; vol. 4; No. 2; 1975; pp. 389-406.
A. Steinemann et al.; "Growth Peculiarities of Gallium Arsenide Single Crystals"; Solid-State Electronics; vol. 6; 1963; pp. 597-604.
Bell Telephone Laboratories Incorporated
Businger Peter A.
Sever Frank
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