Production of semiconductor grade silicon spheres from metallurg

Details Production of semiconductor grade silicon spheres from metallurg Production of semiconductor grade silicon spheres from metallurg

1988-04-21

1991-12-03

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156624, 156DIG64, 423348, C30B 1102

Patent

active

050697404

ABSTRACT:
A method of making single crystal semiconductor grade silicon spheres for solar cells and the like from metallurgical grade silicon. The process comprises sizing metallurgical grade silicon particles to a desired range and oxidizing the outer surfaces of the particles to form a silicon dioxide skin thereon. The particles are then heated to melt the silicon within the skin to cause impurities to travel into the skin. This is made possible because single crystals are formed. The skin and impurities therein are then etched off and the remaining particles are again treated to form a skin with subsequent melt of the interior silicon and removal of the skin, the cycle being repeated until the desired degree of silicon purity is obtained. An intermediate shotting step can yield spheres of substantially uniform diameter for use as the feed for the repeat cycle.

REFERENCES:
patent: 3632438 (1972-01-01), Carlson et al.
patent: 3929529 (1975-12-01), Poponiak
patent: 4430150 (1984-02-01), Levine et al.
patent: 4435209 (1984-03-01), Johansson
patent: 4487651 (1984-12-01), Wang
Pamplin, B. R., "Crystal Growth", Pergamon Press (1980), pp. 301-302.

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