Production of semiconductor devices

Adhesive bonding and miscellaneous chemical manufacture – Delaminating processes adapted for specified product – Delaminating in preparation for post processing recycling step

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29569L, 29580, 29591, 156646, 156649, 156652, 156655, 1566591, 156662, 357 30, 357 56, H01L 21306, B44C 122, C03C 1500, C03C 2506

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046473394

ABSTRACT:
Onto the surface of an initial semiconductor structure 1, 2, 3, 4 is deposited a layer of an organic material 5 having a window 9. Layers 6', 7', and 8' are deposited on the exposed surface of the semiconductor, of which 8' is an ion-beam resisting material. Corresponding layers 6, 7, and 8 are deposited on the organic material. The organic material is then lifted off together with layers 6, 7, and 8. Ion-beam milling of the semiconductor material to either side of 8' followed by removal of any remnant of 8' results in a structure having an elevated semiconductor portion carrying an electrode 6', 7'.
Preferred materials are gallium arsenide for layers 1 and 3, gallium aluminium arsenides for layers 2 and 4, titanium for layers 6' and 8', and gold for layer 7'.
The invention can be applied to the production of rib waveguide electrooptic devices, including phase modulators.

REFERENCES:
patent: 4213805 (1980-07-01), Tsukada
patent: 4341010 (1982-07-01), Tijburg et al.
Soviet Journal of Quantum Electronics, vol. 10, No. 1, Jan. 1980, pp. 60-63, American Institute of Physics, New York, US; Yu A. Bykovskii et al: Electrooptic radiation modulators utilizing semiconductor ridged waveguides, p. 60, col. 2, lines 13-21.
IEEE Journal of Quantum Electronics, vol. QE-18, No. 4, Apr. 1982, pp. 795-800, IEEE, New York, US; M. W. Austin: "GaAs/GaAlAs Curved Rib Waveguides", p. 796, col. 2, lines 20-30.
Le Vide, Les Couches Minces, vol. 35, No. 204, Nov./Dec. 1980, pp. 317-336, Paris, FR; D. Dieumegard: "Purverisation et Technologies d'Erosion Ionique", p. 324, lines 1-15, FIG. 16.
Electronics Letters, vol. 20, No. 7, Mar. 29, 1984, pp. 295-297, London, GB: P. Buchmann et al: "Reactive Ion Etched GaAs Optical Waveguide Modulators, With Low Loss and High Speed", p. 296, lines 4-7.

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