Production of elemental films using a boron-containing...

Details Production of elemental films using a boron-containing... Production of elemental films using a boron-containing...

2006-12-05

2009-02-03

Meeks, Timothy H (Department: 1792)

Coating processes

Coating by vapor, gas, or smoke

Metal coating

C438S685000, C438S687000, C438S680000, C427S250000, C427S255280

Reexamination Certificate

active

07485340

ABSTRACT:
The present invention relates generally to depositing elemental thin films. In particular, the invention concerns a method of growing elemental metal thin films by Atomic Layer Deposition (ALD) using a boron compound as a reducing agent. In a preferred embodiment the method comprises introducing vapor phase pulses of at least one metal source compound and at least one boron source compound into a reaction space that contains a substrate on which the metal thin film is to be deposited. Preferably the boron compound is capable of reducing the adsorbed portion of the metal source compound into its elemental electrical state.

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