Production of crystalline materials by using high intensity...

Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes of growth from liquid or supercritical state – Having growth from a solution comprising a solvent which is...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C117S002000, C117S069000, C117S206000, C117S207000, C023S29300R, C023S29500G, C023S301000, C426S238000, C600S439000, C562S447000

Reexamination Certificate

active

10514883

ABSTRACT:
A crystalline material sufficiently pure for use in pharmaceuticals may be made by forming a saturated solution of the material, changing the temperature of the solution so it becomes supersaturated, and subjecting the solution to irradiation by high intensity ultrasound, the frequency of the ultrasound being scanned over a range of frequencies. For example the ultrasound may be varied between 19.5 and 20.5 kHz, and this variation may be sinusoidal. Preferably the ultrasound is provided only briefly, say for less than 5 s, before allowing the solution to cool gradually without further irradiation. The ultrasound may be applied using a vessel with an array of ultrasonic transducers attached to a wall, so each transducer radiates no more than 3 W/cm2yet the power dissipation within the vessel is between 25 and 150 W/litre. This method can reduce the metastable zone width to less than 10 K. It is applicable in particular to aspartame.

REFERENCES:
patent: 1347350 (1920-07-01), Moore
patent: 2876083 (1959-03-01), Prietl
patent: 3892539 (1975-07-01), Midler, Jr.
patent: 4990216 (1991-02-01), Fujita et al.
patent: 5830418 (1998-11-01), König
patent: 6506250 (2003-01-01), Breitenstein
patent: 6821339 (2004-11-01), Eriksson et al.
patent: 6958040 (2005-10-01), Oliver et al.
patent: 6966947 (2005-11-01), Furuya
patent: 6992216 (2006-01-01), Bechtel et al.
patent: 2002/0031577 (2002-03-01), Arends
patent: 2006/0048699 (2006-03-01), D'Evelyn et al.
patent: 0611589 (1994-08-01), None
patent: 1256558 (2002-11-01), None
patent: 2276567 (1994-10-01), None
patent: 96/07461 (1996-03-01), None
patent: 00/33366 (2000-06-01), None
patent: 0035579 (2000-06-01), None
patent: 02/05921 (2002-01-01), None
patent: 02/089942 (2002-11-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Production of crystalline materials by using high intensity... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Production of crystalline materials by using high intensity..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Production of crystalline materials by using high intensity... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3946199

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.