Low resistance T-shaped ridge structure

Details Low resistance T-shaped ridge structure Low resistance T-shaped ridge structure

2008-01-15

2008-01-15

Goudreau, George A. (Department: 1763)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S039000, C438S041000, C438S044000, C438S697000, C438S702000, C438S749000

Reexamination Certificate

active

10671815

ABSTRACT:
A method and apparatus to provide a low resistance interconnect. A void is defined in the sacrificial layer that is proximate to an active layer. An overgrowth layer is formed in the void and over portions of the sacrificial layer adjacent to the void. A ridge section is defined in the overgrowth layer and portions of the sacrificial layer are removed to define a shank section in the overgrowth layer under the ridge section. The ridge section having a greater lateral dimension than the shank section to reduce electrical resistance between the active layer and electrical interconnects to be electrically coupled to the ridge section.

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PCT International Search Report and Written Opinion, PCT/US2004/031307, Apr. 11, 2005.

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