Production of clean, well-ordered CdTe surfaces using laser abla

Details Production of clean, well-ordered CdTe surfaces using laser abla Production of clean, well-ordered CdTe surfaces using laser abla

1992-09-24

1995-10-03

Dang, Thi

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

1566431, 1566511, 252 791, 21912161, 21912168, 21912169, 21912185, 372109, 20419235, 216 66, H01L 2100

Patent

active

054549027

ABSTRACT:
Chemically-etched and or sputtered CdTe surfaces are exposed to UV excimer laser radiation at a fluence ranging from about 15 to 75 mJ/cm.sup.2, followed by either a low temperature (<300.degree. C.) thermal anneal or exposure of the CdTe surface to UV excimer laser radiation at a fluence lower than the threshold fluence. This procedure provides clean, stoichiometric, and well-ordered CdTe surfaces.

REFERENCES:
patent: 4927773 (1990-05-01), Jack et al.
patent: 5018164 (1991-05-01), Brewer et al.
Brewer et al, "Reversible Modification of CdTe Surface Composition by Excimer Laser Irradiation", Appl. Phys. Lett. (USA), vol. 57, No. 24, pp. 2526-2528, 10 Dec. 1990, 15 REF (Abstract).
Journal of Crystal Growth, vol. 59, No. 1/2, Sep. 1982, Amsterdam Nl, pp. 130-134, Roussille, et al., "Growth of high quality eptaxial CdxHgl-xTe films by sputter deposition".
Week 8504, Nov. 29, 1984, Derwent Publications Ltd., London GB; AN85-018687 & AU, A, 1 859 783 (Katz B.B.) Abstract.
Journal of Soviet Laser Research vol. 6, No. 4, Jul. 1985, New York, pp. 395-404, Bertolottie, "Laser annealing of semiconductors".
J. J. Zinck et al. "Surface Chemistry of Te-Rich CdTe", Material Research Symposium Proc., vol. 204, 1991, pp. 243-250.

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