Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1986-03-17
1987-04-21
Smith, John D.
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
427 86, 427 87, 427 91, 427 99, 430315, 430326, 430328, 430329, 430330, 430331, B05D 512, H01L 21312
Patent
active
046596500
ABSTRACT:
A positive resist containing a weak base and polyvinyl phenol as a film forming component is deposited on a substrate, subsequently exposed imagewise, cured, blanket exposed and developed in a KOH solution at temperatures of less than 10.degree. C. The resist pattern thus obtained is exposed to light having a wavelength ranging from 300 to 320 nm and finally heat-treated at temperatures ranging from 150.degree. to 280.degree. C. The finished lift-off mask is dimensionally stable at temperatures of .ltoreq.280.degree. C. and does not emit liquid or volatile components when heated.
During application of the lift-off mask, a material is blanket vapor deposited at a substrate temperature ranging from about 160.degree. to 250.degree. C. on the resist pattern having openings with overhanging walls. Subsequently, the resist pattern is dissolved in a sodium metasilicate solution, causing the material vapor deposited thereon to be lifted off, with the material deposited on the substrate directly remaining.
The lift-off mask is particularly suitable for generating conductor patterns on semiconductor substrates if low and uniform contact resistances between the conductor and the semiconductor material and a high degree of pattern accuracy and packing density are required.
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Moritz Holger
Pfeiffer Gerd
Dang V. D.
International Business Machines - Corporation
Smith John D.
Stoffel Wolmar J.
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