Production of a hexagonal boron nitride crystal body capable...

Details Production of a hexagonal boron nitride crystal body capable... Production of a hexagonal boron nitride crystal body capable...

2008-05-22

2010-10-12

Ghyka, Alexander G (Department: 2812)

Semiconductor device manufacturing: process

Formation of semiconductive active region on any substrate

Amorphous semiconductor

C438S029000, C438S046000, C438S500000, C257SE21133

Reexamination Certificate

active

07811909

ABSTRACT:
The invention has for its object to provide a process of synthesizing high-purity hBN crystal bodies on a robust substrate even under normal pressure.The inventive process of producing hexagonal boron nitride crystal bodies is characterized by comprising a preparation step of preparing a mixture of a boron nitride raw material and a metal solvent comprising a transition metal, a contact step of bringing a sapphire substrate in contact with the mixture, a heating step of heating the mixture, and a recrystallization step of recrystallizing at normal pressure a melt obtained in the heating step. It is also characterized by using as the metal solvent a transition metal selected from the group consisting of Fe, Ni, Co, and a combination thereof, and at least one substance selected from the group consisting of Cr, TiN and V without recourse to any sapphire substrate.

REFERENCES:
patent: 2005/0158909 (2005-07-01), Milliron et al.
patent: 2009/0093122 (2009-04-01), Ueda et al.
patent: 2009/0191659 (2009-07-01), Song
patent: 2010/0155754 (2010-06-01), Kasahara et al.

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