Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2006-03-10
2011-11-08
Bryant, Kiesha (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S350000, C257S506000, C438S424000, C438S675000
Reexamination Certificate
active
08053897
ABSTRACT:
The invention relates to a method for producing structures which make it possible to form a trench insulation and to bring into contact SOI wafers provided with active thick layers and which are easily processable. For this purpose, a carrier wafer electric contact and the insulation trench are provided with components exhibiting high-blocking capability of insertion into an integrated circuit SOI wafer. A narrow trench for an insulating trench (8) and a large trench for a carrier wafer contact (9) are etched up to an insulating oxide layer (2) and are buried by a masking layer which is thicker than the buried oxide layer (2). In the large trench (9), a polysilicon spacer (12) remains on the sidewalls, respectively, in the form of a predeposited polysilicon layer (11) rest. The adjustment of the polysilicon etching makes it possible to obtain the spacer (12) provided with a desired height. At least buried oxide (2, 10) is removed by etching from the bottom of the large trench (9) in such a way that a residual oxide layer (13) remains on the surface. The deposition of a second electrically conductive filling layer (14) fills also a large insulating trench (19).
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Bryant Kiesha
Hunton & Williams LLP
Tornow Mark
X-Fab Semiconductor Foundries AG
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