Production method of α-SiC wafer

Details Production method of α-SiC wafer Production method of α-SiC wafer

2006-02-07

2006-02-07

Nelms, David (Department: 2818)

Semiconductor device manufacturing: process

Having diamond semiconductor component

C257S077000, C117S200000

Reexamination Certificate

active

06995036

ABSTRACT:
The present invention has its object to make it possible to produce an α-SiC wafer with stability and good reproducibility at low cost without using a seed crystal substrate that is expensive and less available. In each of crucibles11a, 11b, 11c, and so on, a β-SiC substrate19and an SiC raw material17are placed to face each other in close proximity. These crucibles are stacked in layers, and placed inside a radiation tube40. The radiation tube40is heated by an induction heating coil23, radiates radiation heat, and uniformly heats the crucibles11a, 11b, 11cand so on. The SiC raw material in each of the crucibles is sublimated and recrystallized on a surface of the β-SiC substrate19.

REFERENCES:
patent: 6660084 (2003-12-01), Shiomi et al.
patent: 6786969 (2004-09-01), Kondo et al.

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