Production method of SiC monitor wafer

Details Production method of SiC monitor wafer Production method of SiC monitor wafer

2006-04-04

2006-04-04

Wilczewski, Mary (Department: 2822)

Semiconductor device manufacturing: process

Having diamond semiconductor component

C438S690000, C438S692000, C438S507000, C438S931000, C427S585000, C427S589000

Reexamination Certificate

active

07022545

ABSTRACT:
The present invention has its object to obtain an SiC monitor wafer which can flatten the surface until particle detection is possible. SiC of a crystal system 3C is deposited on a substrate by a CVD (Chemical Vapor Deposition) method, and the SiC is detached from a substrate. After the SiC surface is flattened by using mechanical polishing alone or in combination with CMP (Chemo Mechanical Polishing), GCIB (Gas Cluster Ion Beam) is irradiated to the surface until the surface roughness becomes Ra=0.5 nm or less and the impurity density of the wafer surface becomes 1*1011atoms/cm2or less to produce the SiC monitor wafer.

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