Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-02-21
2006-02-21
Everhart, Caridad (Department: 2891)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S687000, C438S643000
Reexamination Certificate
active
07001841
ABSTRACT:
After a thin first conductive film is formed on a barrier film having a crystal structure, a second conductive film is formed on the first conductive film. Thereafter, the first conductive film and the second conductive film are heated such that the first and second conductive films are integrated to form a third conductive film.
REFERENCES:
patent: 4020222 (1977-04-01), Kausche et al.
patent: 5420072 (1995-05-01), Fiordalice et al.
patent: 5747361 (1998-05-01), Ouellet
patent: 5882738 (1999-03-01), Blish et al.
patent: 6069068 (2000-05-01), Rathore et al.
patent: 6221765 (2001-04-01), Ueno
patent: 6352926 (2002-03-01), Ding et al.
patent: 6646346 (2003-11-01), Snyder et al.
patent: 2002/0190352 (2002-12-01), Kishida et al.
patent: 11-283979 (1999-10-01), None
patent: WO 99/33110 (1999-07-01), None
Harada Takeshi
Hirao Shuji
Ikeda Atsushi
Kishida Takenobu
Nii Kazushi
Everhart Caridad
Matsushita Electric - Industrial Co., Ltd.
McDermott Will & Emery LLP
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