Production method of semiconductor device

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S687000, C438S643000

Reexamination Certificate

active

07001841

ABSTRACT:
After a thin first conductive film is formed on a barrier film having a crystal structure, a second conductive film is formed on the first conductive film. Thereafter, the first conductive film and the second conductive film are heated such that the first and second conductive films are integrated to form a third conductive film.

REFERENCES:
patent: 4020222 (1977-04-01), Kausche et al.
patent: 5420072 (1995-05-01), Fiordalice et al.
patent: 5747361 (1998-05-01), Ouellet
patent: 5882738 (1999-03-01), Blish et al.
patent: 6069068 (2000-05-01), Rathore et al.
patent: 6221765 (2001-04-01), Ueno
patent: 6352926 (2002-03-01), Ding et al.
patent: 6646346 (2003-11-01), Snyder et al.
patent: 2002/0190352 (2002-12-01), Kishida et al.
patent: 11-283979 (1999-10-01), None
patent: WO 99/33110 (1999-07-01), None

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Production method of semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Production method of semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Production method of semiconductor device will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3637571

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.