Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2005-01-18
2005-01-18
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S438000, C438S044000
Reexamination Certificate
active
06844246
ABSTRACT:
A GaN layer32grows in vertical direction on a GaN layer31where neither a first mask41mnor a second mask42mis formed. When thickness of the GaN layer32becomes larger than that of the first mask41m, it began to grown in lateral direction so as to cover the first mask41m. Because the second mask42mis not formed on the upper portion of the first mask41m, the GaN layer32grows in vertical direction. On the contrary, at the upper region of the GaN layer31where the mask41mis not formed, the second mask42mis formed like eaves, the growth of the GaN layer32stops and threading dislocations propagated with vertical growth also stops there. The GaN layer32grows in vertical direction so as to penetrate the region where neither the first mask41mnor the second mask42mis formed. When the height of the GaN layer32becomes larger than that of the second mask42m, the GaN layer32begins to grow in lateral direction again and covers the second mask42m. After the GaN layer32completely covers the second mask42m, it began to grow in vertical direction.
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Kodama Masahito
Nagai Seiji
Tomita Kazuyoshi
McGinn & Gibb PLLC
Mulpuri Savitri
Toyoda Gosei Co,., Ltd.
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