Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2006-10-10
2006-10-10
Lindsay, Jr., Walter L. (Department: 2812)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S622000, C438S678000
Reexamination Certificate
active
07118943
ABSTRACT:
In this production method of a thin film device, a thin film is formed by discharging a liquid material from a nozzle in a deposition chamber to coat the liquid material onto a substrate. The substrate is then subjected to heat treatment by a first heat treatment unit and a second heat treatment unit, thereby improving the crystallinity and fitness of the film as well as its adhesion with other films.
REFERENCES:
patent: 5387546 (1995-02-01), Maeda et al.
patent: 5906859 (1999-05-01), Bremmer et al.
patent: 5989945 (1999-11-01), Yudasaka et al.
patent: 6312971 (2001-11-01), Amundson et al.
patent: 6376362 (2002-04-01), Matsumoto
patent: 6565763 (2003-05-01), Asakawa et al.
patent: 6593591 (2003-07-01), Yudasaka et al.
patent: 6713389 (2004-03-01), Speakman
patent: 6810814 (2004-11-01), Hasei
patent: 6811945 (2004-11-01), Kobayashi
patent: 6828582 (2004-12-01), Ando et al.
patent: 6850357 (2005-02-01), Kaneko et al.
patent: 6865010 (2005-03-01), Duthaler et al.
patent: 7014521 (2006-03-01), Fujiike et al.
patent: 2003/0068581 (2003-04-01), Kawamura et al.
patent: 1 087 428 (2000-03-01), None
patent: A 2002-26014 (2002-01-01), None
patent: 1999-028928 (1999-04-01), None
patent: 449670 (2001-11-01), None
patent: WO97/43689 (1997-11-01), None
patent: WO00/59015 (2000-10-01), None
patent: WO 00/59040 (2000-10-01), None
Furusawa Masahiro
Shimoda Tatsuya
Yudasaka Ichio
Lindsay Jr. Walter L.
Oliff & Berridg,e PLC
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