Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2006-06-27
2006-06-27
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
Reexamination Certificate
active
07067402
ABSTRACT:
A Separation by Implanted Oxygen (“SIMOX”) substrate and method for making thereof are provided. The SIMOX substrate can be produced by employing an oxygen ion implantation amount in a low dose range. The substrate is a high quality SOI substrate having an increased thickness of a BOX layer. More specifically, the SIMOX substrate and method for making the same are provided such that a buried oxide layer and a surface silicon layer are formed by applying the implantation of oxygen ions in a silicon substrate and a high temperature heat treatment thereafter. A buried oxide layer is provided by applying a high temperature heat treatment after an oxygen ion implantation; then applying an additional oxygen ion implantation so that the peak position of the distribution of implanted oxygen is located at a portion lower than the interface between the buried oxide layer, already formed, and the substrate thereunder. Then, another high temperature heat treatment is applied. The SIMOX substrate has a surface silicon layer 10 to 400 nm in thickness and a buried oxide layer 60 to 250 nm in thickness.
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Kawamura Keisuke
Matsumura Atsuki
Nagatake Yoichi
Takayama Seiji
Baker & Botts L.L.P.
Coleman W. David
Nippon Steel Corporation
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