Production method for silicon single crystal and production...

Details Production method for silicon single crystal and production... Production method for silicon single crystal and production...

2006-11-28

2006-11-28

Gupta, Yogendra N. (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth with a subsequent step of heat treating...

C117S002000, C117S013000, C117S020000, C438S795000, C432S001000

Reexamination Certificate

active

07141113

ABSTRACT:
A method for growing a silicon crystal by a Czochralsky method, wherein, let a pulling speed be V (mm/min) and an average value of an in-crystal temperature gradient in a pulling axis direction within a temperature range, a silicon melting point to 1350° C., be G (° C./mm), V/G ranges from 0.16 to 0.18 mm2/° C. min between a crystal center position and a crystal outer periphery position, and a ratio G outer/G center of an average value G of an in-crystal temperature gradient in a pulling axis direction within a temperature range, a silicon melting point to 1350° C., at a crystal outer surface to that at a crystal center is set to up to 1.10 to thereby obtain a high-quality perfect crystal silicon wafer. Such a perfect crystal silicon wafer, wherein an oxygen concentration is controlled to up to 13×1017atoms/cm3, an initial heat treatment temperature is at least up to 500° C. and a temperature is raised at up to 1° C./min at least within 700 to 900° C., thereby making uniform a wafer radial distribution to an arbitrary oxygen precipitation density level.

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