Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-09-11
2011-11-22
Tsai, H. Jey (Department: 2895)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S639000, C438S672000, C257SE29119
Reexamination Certificate
active
08062970
ABSTRACT:
The present invention is a production method for a semiconductor device equipped with a conductive film with predetermined film thickness on a sidewall of a concave portion formed in an insulating film, and comprises a step of forming the concave portion in the insulation film formed on a semiconductor substrate. Herein, the concave portion is a generic name of a via-hole and a trench. This production method comprises a step of forming a conductive film with film thickness, which is film thickness of a conductive film to be formed in the concave portion, and which is film thickness, calculated based upon the depth of the concave portion and a projected area of the sidewall of said concave portion when viewing the concave portion from the upper surface, and to be formed over the upper surface of the insulating film where the concave portion is formed. In other words, a film is formed taking the variation of configuration of these based upon a projected area of a via-hole or a trench into consideration.
REFERENCES:
patent: 2005/0123710 (2005-06-01), Matsumoto et al.
patent: 2000-64037 (2000-02-01), None
O'Sullivan et al., Simulation of physical vapor deposition into trenches and vias: Valiation and comparison with experiment, Journal of Applied Physics, vol. 88, No. 7, pp. 4061-4068, Oct. 2000.
McDermott Will & Emery LLP
Panasonic Corporation
Tsai H. Jey
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