Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2010-05-27
2011-10-18
Le, Dung A. (Department: 2818)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S778000, C438S779000, C438S508000
Reexamination Certificate
active
08039404
ABSTRACT:
A production method for a semiconductor device comprising the first step of supplying a first reaction material to a substrate housed in a processing chamber to subject to a ligand substitution reaction a ligand as a reaction site existing on the surface of the substrate and the ligand of the first reaction material, the second step of removing the excessive first reaction material from the processing chamber, the third step of supplying a second reaction material to the substrate to subject a ligand substituted by the first step to a ligand substitution reaction with respect to a reaction site, the fourth step of removing the excessive second reaction material from the processing chamber, and a fifth step of supplying a third reaction material excited by plasma to the substrate to subject a ligand, not subjected to a substitution reaction with respect to a reaction site in the third step, to a ligand substitution reaction with respect to a reaction site, wherein the steps 1-5 are repeated a specified number of times until a film of a desired thickness is formed on the substrate surface.
REFERENCES:
patent: 6660660 (2003-12-01), Haukka et al.
patent: 2004/0053472 (2004-03-01), Kiryu et al.
patent: 2008/0166882 (2008-07-01), Miya et al.
patent: 1 326 271 (2003-09-01), None
patent: 06-326030 (1994-11-01), None
patent: 2000-195820 (2000-07-01), None
patent: 2002-050622 (2002-02-01), None
patent: 2003-115548 (2003-04-01), None
patent: 2004-047948 (2004-02-01), None
patent: 2004-095900 (2004-03-01), None
patent: 2004-281583 (2004-10-01), None
patent: 2004-281853 (2004-10-01), None
patent: 2003-0051654 (2003-06-01), None
patent: WO 02/23614 (2002-03-01), None
Chinese Office Action dated Aug. 12, 2010 and its English translation.
Asai Masayuki
Horita Hideki
Miya Hironobu
Mizuno Norikazu
Okuda Kazuyuki
Birch Stewart Kolasch & Birch, LLP.
Hitachi Kokusai Electric Inc.
Le Dung A.
LandOfFree
Production method for semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Production method for semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Production method for semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4278632