Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Insulative material deposited upon semiconductive substrate
Reexamination Certificate
2007-01-23
2007-01-23
Smith, Zandra V. (Department: 2822)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Insulative material deposited upon semiconductive substrate
C438S622000, C438S623000, C438S781000, C438S782000, C257SE21002
Reexamination Certificate
active
10490767
ABSTRACT:
The invention aims at providing a dielectric film having a low dielectric constant and enhanced mechanical strength. A surfactant and an silica derivative are dissolved into a solvent at a desired mole ratio. The precursor solution is applied over the substrate, and the substrate is exposed to a silica derivative atmosphere before being sintered, thereby supplying a silica derivative. Thus, contraction of the film stemming from hydrolysis is inhibited, and a sturdy mesoporous silica thin film which takes the self-assembly of the surfactant as a mold is obtained while cavities are maintained intact without being fractured. Thus, there is formed an inorganic dielectric film which is formed on the surface of the substrate and has a cyclic porous structure including layered or columnar pores oriented so as to become parallel with the surface of the substrate.
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Nishiyama Norikazu
Oku Yoshiaki
Ueyama Korekazu
Hamre Schumann Mueller & Larson P.C.
Novacek Christy
Rohm & Co., Ltd.
Smith Zandra V.
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