Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-09-20
2005-09-20
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S673000, C438S761000
Reexamination Certificate
active
06946385
ABSTRACT:
Disclosed herein is a production method of a semiconductor device having multilayer interconnections of well-formed dual damascene structure in the low dielectric constant interlayer insulating film.The method includes a step of forming on an underlayer wiring a first insulating film, a second insulating, and first mask forming layer; a step of forming a first resist mask (20) having an inverted pattern of wiring trenches for the upper wiring; a step of etching the first mask forming layer through the first resist mask, thereby forming in the first mask forming layer a concave part conforming to the inverted pattern of wiring trenches for the upper wiring, and then forming on the first mask forming layer a second mask forming layer, thereby filling the concave part with the second mask forming layer; a step of selectively removing the second mask forming layer on the region in which the wiring trench is formed, thereby forming the second mask having the wiring trench pattern; a step of forming on the first mask forming layer a second resist mask (12) having an opening pattern of the via holes; a step of etching the first mask forming layer and the second insulating film through the second resist mask, thereby forming the via holes. This process is followed by the ordinary procedure to form the dual damascene structure.
REFERENCES:
patent: 2001/0002331 (2001-05-01), Miyata
patent: 2004/0026364 (2004-02-01), Kihara et al.
patent: 10-143914 (1998-05-01), None
patent: 2000-150519 (2000-05-01), None
patent: 2001-044189 (2001-02-01), None
patent: 2001-332619 (2001-11-01), None
International Search Report Sep. 24, 2003.
Dang Phuc T.
Kananen Ronald P.
Rader & Fishman & Grauer, PLLC
Sony Corporation
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