Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Reexamination Certificate
2006-05-30
2006-05-30
Nguyen, Tuan H. (Department: 2813)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
C438S481000
Reexamination Certificate
active
07052979
ABSTRACT:
When a substrate layer (desired semiconductor crystal) made of a group III nitride compound is grown on a base substrate comprising a lot of projection parts, a cavity in which a semiconductor crystal is not deposited may be formed between each projection part although it depends on conditions such as the size of each projection part, arranging interval between each projection part and crystal growth. So when the thickness of the substrate layer is sufficiently larger compared with the height of the projection part, inner stress or outer stress become easier to act intensively to the projection part. As a result, such stress especially functions as shearing stress toward the projection part. When the shearing stress becomes larger, the projection part is ruptured. So utilizing the shearing stress enables to separate the base substrate and the substrate layer easily. The larger the cavities are formed, the more stress tends to concentrate to the projection parts, to thereby enable to separate the base substrate and the substrate layer more securely.
REFERENCES:
patent: 4677250 (1987-06-01), Barnett et al.
patent: 5185290 (1993-02-01), Aoyagi et al.
patent: 5798536 (1998-08-01), Tsutsui
patent: 5828088 (1998-10-01), Mauk
patent: 6051849 (2000-04-01), Davis et al.
patent: 6110277 (2000-08-01), Braun
patent: 6121121 (2000-09-01), Koide
patent: 6146457 (2000-11-01), Solomon
patent: 6153010 (2000-11-01), Kiyoku et al.
patent: 6177688 (2001-01-01), Linthicum et al.
patent: 6255198 (2001-07-01), Linthicum et al.
patent: 6261929 (2001-07-01), Gehrke et al.
patent: 6265289 (2001-07-01), Zheleva et al.
patent: 6274518 (2001-08-01), Yuri et al.
patent: 6316785 (2001-11-01), Nunoue et al.
patent: 6319742 (2001-11-01), Hayashi et al.
patent: 6329667 (2001-12-01), Ota et al.
patent: 6355497 (2002-03-01), Romano et al.
patent: 6365921 (2002-04-01), Watanabe et al.
patent: 6380108 (2002-04-01), Linthicum et al.
patent: 6403451 (2002-06-01), Linthicum et al.
patent: 6720586 (2004-04-01), Kidoguchi et al.
patent: 0 551 721 (1993-07-01), None
patent: 0 779 666 (1997-06-01), None
patent: 0 951 055 (1999-10-01), None
patent: 0 993 048 (2000-04-01), None
patent: 1 045 431 (2000-10-01), None
patent: 1 059 661 (2000-12-01), None
patent: 1 059 677 (2000-12-01), None
patent: 49-149679 (1973-04-01), None
patent: 48-95181 (1973-12-01), None
patent: 51-137393 (1976-11-01), None
patent: 55-34646 (1978-08-01), None
patent: 57-115849 (1982-07-01), None
patent: 58-33882 (1983-02-01), None
patent: 1-316459 (1989-12-01), None
patent: 3-133182 (1991-06-01), None
patent: 4-10665 (1992-01-01), None
patent: 4-84418 (1992-03-01), None
patent: 4-303920 (1992-10-01), None
patent: 5-41536 (1993-02-01), None
patent: 5-110206 (1993-04-01), None
patent: 5-283744 (1993-10-01), None
patent: 5-343741 (1993-12-01), None
patent: 6-196757 (1994-07-01), None
patent: 7-249830 (1995-09-01), None
patent: 7-273367 (1995-10-01), None
patent: 8-64791 (1996-03-01), None
patent: 8-102549 (1996-04-01), None
patent: 8-116090 (1996-05-01), None
patent: 8-222812 (1996-08-01), None
patent: 8-274411 (1996-10-01), None
patent: 9-162125 (1997-06-01), None
patent: 10-312971 (1998-11-01), None
patent: 10-321954 (1998-12-01), None
patent: 11-31864 (1999-02-01), None
patent: 11-043398 (1999-02-01), None
patent: 11-135770 (1999-05-01), None
patent: 11-135832 (1999-05-01), None
patent: 11-145516 (1999-05-01), None
patent: 11-145519 (1999-05-01), None
patent: 11-191533 (1999-07-01), None
patent: 11-191657 (1999-07-01), None
patent: 11-191659 (1999-07-01), None
patent: 11-219910 (1999-08-01), None
patent: 11-251632 (1999-09-01), None
patent: 11-260737 (1999-09-01), None
patent: 11-274082 (1999-10-01), None
patent: 11-312825 (1999-11-01), None
patent: 11-329971 (1999-11-01), None
patent: 11-330546 (1999-11-01), None
patent: 11-340508 (1999-12-01), None
patent: 2000-21789 (2000-01-01), None
patent: 2000-44121 (2000-02-01), None
patent: 2000-91253 (2000-03-01), None
patent: 2000-106455 (2000-04-01), None
patent: 2000-106473 (2000-04-01), None
patent: 2000-124500 (2000-04-01), None
patent: 2000-150959 (2000-05-01), None
patent: 2000-174393 (2000-06-01), None
patent: 2000-232239 (2000-08-01), None
patent: 2000-244061 (2000-09-01), None
patent: 2000-261106 (2000-09-01), None
patent: 2000-277437 (2000-10-01), None
patent: 2000-299497 (2000-10-01), None
patent: 2000-331937 (2000-11-01), None
patent: 2000-331947 (2000-11-01), None
patent: 2000-357663 (2000-12-01), None
patent: 2000-357843 (2000-12-01), None
patent: 2001-60719 (2001-03-01), None
patent: 2001-93837 (2001-04-01), None
patent: 2001-111174 (2001-04-01), None
patent: 2001-122693 (2001-05-01), None
patent: 2001-176813 (2001-06-01), None
patent: 2001-257193 (2001-09-01), None
patent: PCT WO 97/11518 (1997-03-01), None
patent: PCT WO 98/47170 (1998-10-01), None
patent: PCT WO 99/01594 (1999-01-01), None
patent: PCT WO 00/04615 (2000-01-01), None
patent: PCT WO 00/55893 (2000-09-01), None
patent: PCT WO 02/058120 (2002-07-01), None
PCT Forms 338 and 409 (IPER) (PCT/JP02/05446) and translations thereof.
PCT Forms 338 and 409 (IPER) (PCT/JP02/02628) and translations thereof.
PCT Forms 338 and 409 (IPER) (PCT/JP02/01159) and translations thereof.
D. Kapolnek et al., “Anisotropic epitaxial lateral growth in GaN selective area epitaxy”, Appl. Phys. Lett. 71(9), Sep. 1, 1997, pp. 1204-1206.
Matsushima et al., “Selective growth of GaN on sub-micron pattern by MOVPE”, Technical Report of IEICE, ED97-32, CPM97-20 (May 1997) pp. 41-46.
Ujiie et al., “Epitaxial Lateral Overgrowth of GaAs on a Si Substrate”, Japanese Journal of Applied Physics vol. 28, No. 3, Mar., 1989, pp. L337-L339.
Partial Translation of the Office Action for Japanese Patent Application No. 9-311518 dated Jun. 10, 2003.
Nam et al., “Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy”, pp. 2638-2640, Appl. Phys. Lett. 71 (18), Nov. 3, 1997.
Hiramatsu et al., “Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy”, pp. 104-111, Materials Science and Engineering B59 (1999).
Akasaki et al., “Effects of AIN Buffer Layer on Crystallographic Structure and on Electrical and Optical Properties of GaN and Gal-xAlxN . . . Movpe” pp. 209-219, Journal of Crystal Growth 98 (1989) North-Holland, Amsterdam.
Yang et al., High quality GaN-InGaN heterostructures grown on (111) silicon substrates, pp. 3566-3568, Appl. Phys. Lett. 69 (23), Dec. 2, 1996.
Wolf et al., “Silicon Processing for the VLSI Era,” vol. 1, Lattice Press, 1986, p. 5.
Luther et al., “Titanium and titanium nitride contacts to n-type gallium nitride”, Semicond. Sci. Technol. 13 (1998) pp. 1322-1327.
Dimitriadis et al., “Contacts of titanium nitride to—and p-type gallium nitride films”, Solid-State Electronics 43 (1999), pp. 1969-1972.
Zheleva et al., “Pendeo-Epitaxy-A New Approach for Lateral Growth of Galium Nitride Structures”, MRS Internet J. Nitride Semicond. Res. 4SI, G3.38 (1999), 6 pages total.
Uchida et al., “AlGaInN based Laser Diodes”, In-Plans Semiconductor Lasers IV, III-Vs Review vol. 13, No. 3, May/Jun. 2000, pp. 156-164.
Zheleva et al., Pendeo-Epitaxy versus Lateral Epitaxial Overgrowth of GaN: A Comparative Study via Finite element Analysis, Journal of electronic Materials, vol. 28, No. 4, Apr. 1999, pp. 545-551.
Zheleva et al., “Pendeo-Epitaxy: A New Approach for Lateral Growth of Gallium Nitride Films”, Journal of Electronic Materials, vol. 28, No. 4, 1999, pp. L5-L8.
PCT Form 210 (PCT/JP02/05446).
PCT Form 210 (PCT/JP02/02628).
PCT Form 210 (PCT/JP02/01159).
PCT Form 210 (PCT/JP01/01928).
PCT Form 210 (PCT/JP01/02695).
PCT Form 210 (PCT/JP00/09120).
PCT Form 210 (PCT/JP01/01396).
PCT Form 210 (PCT/JP01/01178).
PCT Form 210 (PCT/JP01/01663).
PCT Form 210 (PCT/JP00/09121).
PCT Form 210 (PCT/JP00/09220).
PCT Form 338 and 409 (IPER) (PCT/JP01/02695).
PCT Form 338 and 409 (IPER) (PCT/JP01/01663) and t
Hiramatsu Toshio
Nagai Seiji
Tezen Yuta
Tomita Kazuyoshi
Yamazaki Shiro
McGinn IP Law Group PLLC
Nguyen Tuan H.
Toyoda Gosei Co,., Ltd.
LandOfFree
Production method for semiconductor crystal and... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Production method for semiconductor crystal and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Production method for semiconductor crystal and... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3618913