Production method for encapsulating a semiconductor device

Plastic and nonmetallic article shaping or treating: processes – Direct application of fluid pressure differential to... – Producing multilayer work or article

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26427214, 26427215, 26427217, 264276, 425116, 425544, B29C 3318, B29C 3368, B29C 4502

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058464778

ABSTRACT:
A method of producing a semiconductor device by encapsulating a semiconductor element with a resin, which comprises disposing a semiconductor element with lead frames and an encapsulating resin in a state of being sandwiched between a pair of films on a molding mold having a port for setting the encapsulating resin, closing the mold, pressing the encapsulating resin between the films in a heated state by a plunger vertically moving in the pot, and injecting the molten encapsulating resin in the inside of the mold cavity from the pot portion through a runner portion to encapsulate the semiconductor element with the encapsulating resin.

REFERENCES:
patent: H1654 (1997-06-01), Rounds
patent: 4961893 (1990-10-01), Rose
patent: 5000903 (1991-03-01), Matzinger et al.
patent: 5151276 (1992-09-01), Sato et al.
patent: 5350553 (1994-09-01), Glaser et al.
patent: 5387306 (1995-02-01), Jarvis
patent: 5417905 (1995-05-01), Lemaire et al.
"3P--`Pre-Packaged-Processing`--A revolution in IC packaging technology", BDM Nederland BV, May 1995.

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