Product resulting from selective deposition of polysilicon over

Details Product resulting from selective deposition of polysilicon over Product resulting from selective deposition of polysilicon over

1997-03-25

1998-10-06

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Including semiconductor material other than silicon or...

Containing germanium, ge

257755, 257382, 257384, 257554, 257576, H01L 31117

Patent

active

058181008

ABSTRACT:
A method, and resulting product, are disclosed for selectively forming polycrystalline silicon over exposed portions of a single crystal silicon substrate. The method includes inhibiting the formation of such polycrystalline silicon over adjacent silicon oxide surfaces; and the resulting product of such a process. The polycrystalline silicon is selectively deposited over the single crystal silicon substrate by first forming a thin layer of a lattice mismatched material over the single crystal silicon surface, and then depositing a layer of polycrystalline silicon over the lattice mismatched material. Preferably, the thin lattice mismatched layer comprises a silicon/germanium (SiGe) alloy.

REFERENCES:
patent: 5091760 (1992-02-01), Maeda et al.
patent: 5268324 (1993-12-01), Aitken et al.

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