Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-03-27
2000-05-16
Loke, Steven H.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257107, 257910, 365103, 365104, 365105, 365180, H01L 2976, H01L 2974, G11C 1700, G11C 1706, G11C 1134
Patent
active
060641002
ABSTRACT:
A manufacturing method and a structure for ROM component having a silicon controlled rectifier as the basic memory instead of a channel transistor in a conventional ROM, and using a formation of contact windows for coding a ROM instead of performing an ion implantation process. Also, since a silicon controlled rectifier occupies a smaller component surface area, the level of integration is correspondingly increased. Furthermore, due to interposition of an insulating layer between two bit lines, short circuiting between the adjacent bit lines is prevented. The component of this invention operates by applying a suitable voltage to the word line electrode and the bit line electrode respectively to select a particular memory unit, and as a result, a current will flow in a vertical direction through the memory unit, exit through the common electrode depending on the ON/OFF state of the memory, and be detected there.
Huang Jiawei
Loke Steven H.
United Microelectronics Corp.
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