Producing stress-relaxed crystalline layer on a substrate

Details Producing stress-relaxed crystalline layer on a substrate Producing stress-relaxed crystalline layer on a substrate

2004-02-06

2008-10-28

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Germanium or silicon or ge-si on iii-v

C438S197000, C438S506000, C257SE21054, C257SE21092, C257SE21102, C257SE21115, C257SE21248

Reexamination Certificate

active

07442657

ABSTRACT:
A stress relaxed monocrystalline layer structure is made on a nonlattice matched substrate by first applying to the substrate epitaxially a monocrystalline layer structure comprising at least one layer, the monocrystalline layer structure forming with the substrate an interface that has a greater lattice parameter mismatch on the substrate than within the monocrystalline layer structure. The monocrystalline layer is irradiated by directing an ion beam to generate predominantly point effects in the monocrystalline layer structure and an extended defect region in the substrate proximal to the monocrystalline layer structure. Then the monocrystalline layer structure is thermally treated in a temperature range of 550° C. to 1000° C. in an inert, reducing or oxidizing atmosphere so that the monocrystalline layer structure above the extended defect region is stress relaxed and has a defect density less than 106cm−2and a surface roughness of less than 1 nm.

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