Producing SOI structure using high-purity ion shower

Details Producing SOI structure using high-purity ion shower Producing SOI structure using high-purity ion shower

2006-05-31

2009-10-27

Garber, Charles D. (Department: 2812)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S149000, C438S458000, C257SE21568

Reexamination Certificate

active

07608521

ABSTRACT:
Disclosed are methods for making SOI and SOG structures using purified ion shower for implanting ions to the donor substrate. The purified ion shower provides expedient, efficient, low-cost and effective ion implantation while minimizing damage to the exfoliation film.

REFERENCES:
patent: 4914292 (1990-04-01), Tamai et al.
patent: 5189303 (1993-02-01), Tanjyo et al.
patent: 5350926 (1994-09-01), White et al.
patent: 5985742 (1999-11-01), Henley et al.
patent: 6010579 (2000-01-01), Henley et al.
patent: 6027988 (2000-02-01), Cheung et al.
patent: 6155909 (2000-12-01), Henley et al.
patent: 6160262 (2000-12-01), Aoki et al.
patent: 6162705 (2000-12-01), Henley et al.
patent: 6300227 (2001-10-01), Liu et al.
patent: 6344404 (2002-02-01), Cheung et al.
patent: 6458671 (2002-10-01), Liu et al.
patent: 6458672 (2002-10-01), Henley et al.
patent: 6927148 (2005-08-01), Ito
patent: 2002/0064924 (2002-05-01), Cheung et al.
patent: 2002/0100880 (2002-08-01), Chen et al.
patent: 2004/0038504 (2004-02-01), Ito
patent: 2004/0171232 (2004-09-01), Cayrefourcq et al.
patent: 2004/0229444 (2004-11-01), Couillard et al.
patent: 2006/0038227 (2006-02-01), Aitken et al.
patent: 11-329996 (1999-11-01), None
Phosphorus Ion Shower Implantation for Special Power IC Application, F. Kroner, R. Schork, L. Frey, A. Burenkov and H. Ryssel, IEEE, 2000, pp. 476-479.

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