Processing system and method for treating a substrate

Details Processing system and method for treating a substrate Processing system and method for treating a substrate

2006-01-24

2008-12-09

Schillinger, Laura M (Department: 2813)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S704000, C438S701000

Reexamination Certificate

active

07462564

ABSTRACT:
A processing system and method for chemical oxide removal (COR), wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second treatment chambers are coupled to one another. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The second treatment chamber comprises a heat treatment chamber that provides a temperature controlled chamber, thermally insulated from the chemical treatment chamber. The heat treatment chamber provides a substrate holder for controlling the temperature of the substrate to thermally process the chemically treated surfaces on the substrate.

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